Lateral E-Mode GaN HEMTs on Si
Enhancement-mode GaN HEMTs are a critical switch technology for high efficiency power converters often used in power distribution systems for DOW installations aboard aircraft, ships, submarines, and space systems as well as electronic warfare applications. This technology is also well suited for dual-use applications in automotive, airborne, data center, telecommunications, and consumer electronics. Use of GaN technology has demonstrated improvements in SWaP over legacy technologies due to faster switching speeds, reduced parasitic losses, and higher power densities. These devices also possess attractive radiation hardness for space environments. GaN-on-Si technology represents a cost effective format for GaN technology that can be transitioned from lab to fab through CMOS-compatible foundries. To address the broad range of dual use applications, CLAWS offers flexible RDKs defining GaN HEMTs.
Description of Current RDK Release
The RDK is for a normally-off (enhancement mode) GaN HEMT capable of blocking voltages up to 200V. E-mode behavior is achieved via a p-GaN gate topology that is commercially prevalent. This design leverages a self-aligned gate (SAG) and highly scalable device architecture to enable low on-state resistance. Device design flexibility exists to, for example, lower on-state resistance or attain higher breakdown voltages.
| Spec # | Type | Description |
|---|---|---|
| CL-0152-TD | Device | Performance specification of a reference 200V E-mode GaN HEMT. The flexibility matrix offers opportunities to engineer FEOL device dimensions (e.g., LGD) in response to the customer’s application needs. |
| CL-0178-TD | Process | This process will yield enhancement mode (normally off) GaN HEMTs with a self-aligned gate (SAG). Minimum feature size of 0.6µm for FEOL process steps. Process scalable to 150 mm Si substrates. |
| CL-0179-TD | Qualification Plan | Summary of qualification data captured to specify the baseline 200V GaN E-mode HEMT’s performance, as well as the flexibility matrix. |
EDA Description:
Compact models for devices will be provided for designers accessing the RDK to simulate performance in their intended application. These models will have been developed using measured qualification data from fabricated devices and supported by TCAD models. Users will be able to access device cells defining physical layout characteristics, enabling custom tapeouts where needed. The layout can then be evaluated using physical simulation tools and packaged devices can be further evaluated using 3D simulations, supported by models provided under the RDK.
40V
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200V
The full flow for 200V HEMTs starts with a self-aligned gate process module followed by passivation, Ohmic contact formation, and field plate fabrication. Back end of the line processing proceeds with interlayer dielectric deposition and final metallization.
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650V
650V HEMTs are currently in development. A future RDK release is planned. Please contact CLAWS to express interest and explore opportunities for advanced sampling.
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