{"id":502,"date":"2025-03-04T14:31:20","date_gmt":"2025-03-04T19:31:20","guid":{"rendered":"https:\/\/claws.ncsu.edu\/?page_id=502"},"modified":"2025-03-04T14:31:22","modified_gmt":"2025-03-04T19:31:22","slug":"claws-research-experience-for-undergraduates-reu-projects","status":"publish","type":"page","link":"https:\/\/claws.ncsu.edu\/workforce-development\/claws-research-experience-for-undergraduates-reu-projects\/","title":{"rendered":"CLAWS Research Experience for Undergraduates (REU) Projects"},"content":{"rendered":"\n\n\n\n\n

Please review the following sample projects for our Summer 2025 REU program at NC State. Priority applications are due by March 14, 2025. If you wish to apply, please do so using the button below. Any questions can be directed to Phillip Strader (phillip_strader@ncsu.edu<\/a>)<\/p>\n\n\n

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\n \n Apply Now<\/span>\n\t\t\t\n\t\t\t\n\t\t<\/svg><\/span>\n <\/a>\n <\/div>\n \n\n <\/div>\n\n\n\n
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  1. Building a cryogenic optical characterization setup for nanoscale semiconductor light sources and metasurfaces (<\/strong>Qing Gu<\/strong><\/a>, NC State, Electrical and Computer Engineering)<\/strong><\/li>\n<\/ol>\n\n\n\n

    The goals of this projects are: (1) participating in the building and testing of an optical characterization setup that is used to measure transmission, reflection, and emission of nano- and micro-scale light sources and metasurfaces. (2) build and configure a cyrogenic system from existing components and integrate it into the optical characterization setup.<\/p>\n\n\n\n

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    1. Waferbonding of GaN to SiN waveguides (<\/strong>Stanley Cheung<\/strong><\/a>, NC State, Electrical and Computer Engineering)<\/strong><\/li>\n<\/ol>\n\n\n\n

      This REU project focuses on the integration of III-N (GaN) compound semiconductors with silicon nitride (SiN) through wafer bonding techniques. Wide bandgap III-N materials exhibit superior electronic and optoelectronic properties, making them highly desirable for applications in high-speed electronics, photonics, and energy-efficient devices. However, the direct growth of III-N materials on SiN presents challenges due to lattice mismatch and thermal expansion coefficient differences. Wafer bonding offers an alternative pathway to monolithic integration, enabling the combination of III-N and SiN technologies for next-generation electronic and photonic devices.<\/p>\n\n\n\n

      Project Objectives:<\/p>\n\n\n\n