Vertical GaN PN Diodes
Vertical devices take full advantage of GaN’s large critical electric field. Combined with GaN’s high electron mobility and velocity, these devices stand to outperform incumbent Si power devices in high power applications. The GaN PN diode improves the performance of several DOW applications, such as solid state transformers, microgrids, pulsed power supplies. It can also be used as a protection unit in the front-end of an radio-frequency transceiver or in an electric grid. These devices can also be advantageously integrated into commercial systems, such as hybrid electric vehicles, medical imaging systems (e.g., X-ray generators) and drilling platforms benefiting from high-temperature pulsed power supplies. CLAWS has partnered with advanced homoepitaxial GaN suppliers, Adroit Materials, Kyma Technologies and Sandia National Lab, to make available discrete GaN PN diodes and foundry services to produce these devices.
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The RDK is for a vertical GaN PN junction diode characterized by a breakdown voltage of 1.2 kV. The diode structure is grown via metalorganic chemical vapor deposition (MOCVD) on bulk GaN substrates. Edge terminations are realized via nitrogen implantation, resulting in a planar device structure. Device design flexibility exists to, for example, scale the anode area to meet the power handling needs of your application.
| Spec # | Type | Description |
|---|---|---|
| CL-XXXX | Device | Performance specification of a reference 1.2 kV vertical GaN PN junction diode employing a hybrid-JTE edge termination via nitrogen implantation. The flexibility matrix offers opportunities to engineer device geometries, such as the anode area to scale power handling. |
| CL-XXXX | Fabrication Process | The fabrication process uses stepper lithography and ion implanted edge terminations. Baseline capability demonstrated on 50 mm bulk GaN substrates, though the process is scalable to 100 mm or larger substrates. |
| CL-XXXX | MOCVD Epitaxy Process | A reference epitaxial structure for the 1.2 kV vertical GaN PN diode grown by MOCVD. The flexibility matrix offers opportunities to adjust the thickness and doping of the drift and anode layers. |
| CL-XXXX | Device Qualification Plan | Summary of qualification data captured to specify the baseline 1.2 kV vertical GaN PN diode’s performance, as well as the flexibility matrix. |
EDA Description:
Compact models for devices will be provided for designers accessing the RDK to simulate performance in their intended application. These models will have been developed using measured qualification data from fabricated devices and supported by TCAD models. Users will be able to access device cells defining physical layout characteristics, enabling custom tapeouts where needed. The layout can then be evaluated using physical simulation tools and packaged devices can be further evaluated using 3D simulations, supported by models provided under the RDK.
1.2 kV Diode
Diode fabrication starts with homoepitaxial MOCVD of the GaN PN diode structure on conducting bulk GaN substrates. Following nitrogen implants for isolation and edge termination, anode and cathode contacts are formed.
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2.0/5.0 kV Diode
2kV and 5 kV vertical GaN PN diodes are currently in development. A future RDK release is planned. Please contact CLAWS to express interest and explore opportunities for advanced sampling.
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