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C-Band

C-band (4-8GHz) wireless systems take advantage of the low atmospheric absorption by water vapor at these frequencies, resulting in an operating range that is superior to higher frequency bands and resolution better than what is offered by S-band technologies.  These systems support long-haul terrestrial wireless telecommunications and geostationary satellite communications for telecommunications and broadcasting.  C-band radar is often used for weather monitoring and forecasting, and surveillance due to its combination of long range and spatial resolution.

Current RDK Release

An RDK is available that describes a front end of the line (FEOL) GaN-on-SiC HEMT process flow.  This FEOL process flow yields a depletion-mode device with a low-leakage Schottky gate defined by optical lithography. Isolation is achieved via ion implantation.  Typical devices have demonstrated fT near 20GHz with high breakdown voltage. 

EDA Description

A qualified MMIC design platform will be available, comprising active and passive elements.  EDA elements will include device cells with associated physical layout and schematic definitions, compact models, and technology files to enable 2D and 3D simulations. The RDK will have been developed using measured qualification data from fabricated devices and supported by TCAD models.  Users will be able to access device cells defining physical layout characteristics, enabling custom tapeouts where needed.  The layout can then be evaluated using physical simulation tools for EM/RF and coupled electrothermal effects.  Packaged devices can be further evaluated using full 3D simulations, supported by models provided under the RDK.

  • GaN-on-SiC HEMT
    The currently available FEOL flow for GaN HEMTs begins with Ohmic contact formation followed by implant isolation, gate metallization, passivation, and field plate and final metallizations. Process development is underway to implement shorter gates (L ≤ 150nm) defined by E-beam lithography and integrate a back end of the line (BEOL) process enabling wafer thinning and through substrate vias (TSVs).
  • GaN-on-SiC Passive elements
    Passive elements are critical components of MMIC design platforms that enable, for example, advanced IC optimization or integrated impedance matching and biasing.  FEOL process flows are under development supporting thin film resistors, MIM capacitors, and inductor structures.  These passive elements will be fabricated on GaN-on-SiC substrates to enable on-chip integration with active devices.
  • MMIC
    HEMT and passive element capabilities are being developed to deliver an integrated future MMIC process flow.  Supported by the EDA platform, this capability will enable the design and fabrication of custom GaN-on-SiC MMICs with on-chip passive elements.