The demand for energy-efficient and high-power electronic devices has been rapidly increasing in recent years. Silicon Carbide (SiC) MOSFETs have become a popular choice in the future generation of DOW applications due to their high voltage handling capability, low on-state resistance, and fast switching speed. The applications include naval shipboard power and  directed energy weapons. GE Aerospace Research is developing 3.3kV-10kV SiC MOSFET prototypes and will have the ability to support low volume production for these devices once development is complete. In addition to prototyping and low volume production, GE is planning to offer a Device Tool kit for the 3.3kV-10kV SiC MOSFET. The device tool kit will provide selected high-level process blocks as well as a device SPICE model to enable DOD customers to specify their own SiC MOSFET devices using He’s fabrication line. This program will enable hub members to specify custom devices requirements using GE’s device toolkit