III-V Power Electronics

CLAWS RDKs are available that define the design and fabrication processes for III-N power electronics technologies including lateral and vertical GaN device technologies. These technologies exploit GaN’s wide bandgap to improve the SWAP-C DOW power systems.

Lateral E-Mode GaN HEMTs on Si

Enhancement-mode GaN HEMTs are a critical switch technology for high efficiency and high density DOW power systems.

Vertical GaN PN Diodes

Vertical devices take full advantage of GaN’s large critical electric field. Combined with GaN’s high electron mobility and velocity, these devices stand to outperform incumbent Si power devices in high power applications.

III-V Power Electronics

Lateral E-Mode GaN HEMTs on Si

Vertical GaN PN Diodes

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